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SIHA12N50E-E3

SIHA12N50E-E3

For Reference Only

Part Number SIHA12N50E-E3
PNEDA Part # SIHA12N50E-E3
Description MOSFET N-CH 500V 10.5A TO-220FP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,536
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHA12N50E-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHA12N50E-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHA12N50E-E3, SIHA12N50E-E3 Datasheet (Total Pages: 8, Size: 162.57 KB)
PDFSIHA12N50E-E3 Datasheet Cover
SIHA12N50E-E3 Datasheet Page 2 SIHA12N50E-E3 Datasheet Page 3 SIHA12N50E-E3 Datasheet Page 4 SIHA12N50E-E3 Datasheet Page 5 SIHA12N50E-E3 Datasheet Page 6 SIHA12N50E-E3 Datasheet Page 7 SIHA12N50E-E3 Datasheet Page 8

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SIHA12N50E-E3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds886pF @ 100V
FET Feature-
Power Dissipation (Max)32W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220 Full Pack
Package / CaseTO-220-3 Full Pack

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