IXFC22N60P

For Reference Only
Part Number | IXFC22N60P |
PNEDA Part # | IXFC22N60P |
Description | MOSFET N-CH 600V 12A ISOPLUS220 |
Manufacturer | IXYS |
Unit Price | Request a Quote |
In Stock | 3,672 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Mar 16 - Mar 21 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
IXFC22N60P Resources
Brand | IXYS |
ECAD Module |
![]() |
Mfr. Part Number | IXFC22N60P |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
Payment Method






- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode





- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IXFC22N60P Datasheet
- where to find IXFC22N60P
- IXYS
- IXYS IXFC22N60P
- IXFC22N60P PDF Datasheet
- IXFC22N60P Stock
- IXFC22N60P Pinout
- Datasheet IXFC22N60P
- IXFC22N60P Supplier
- IXYS Distributor
- IXFC22N60P Price
- IXFC22N60P Distributor
IXFC22N60P Specifications
Manufacturer | IXYS |
Series | HiPerFET™, PolarHT™ |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 360mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id | 5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs | 58nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 4000pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 130W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | ISOPLUS220™ |
Package / Case | ISOPLUS220™ |
The Products You May Be Interested In
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 36A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 20mOhm @ 18A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 9.7nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 670pF @ 10V FET Feature - Power Dissipation (Max) 47W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series SuperFET® III FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 82mOhm @ 20A, 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3410pF @ 400V FET Feature - Power Dissipation (Max) 313W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 27A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 265mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3830pF @ 25V FET Feature - Power Dissipation (Max) 200W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3 |
Manufacturer Toshiba Semiconductor and Storage Series U-MOSVI FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 59mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 10.4nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 630pF @ 10V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package ES6 Package / Case SOT-563, SOT-666 |
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 65mOhm @ 40A, 10V Vgs(th) (Max) @ Id 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 10000pF @ 25V FET Feature - Power Dissipation (Max) 1250W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-264AA (IXFK) Package / Case TO-264-3, TO-264AA |