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SIE816DF-T1-GE3

SIE816DF-T1-GE3

For Reference Only

Part Number SIE816DF-T1-GE3
PNEDA Part # SIE816DF-T1-GE3
Description MOSFET N-CH 60V 60A POLARPAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,510
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIE816DF-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIE816DF-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIE816DF-T1-GE3, SIE816DF-T1-GE3 Datasheet (Total Pages: 7, Size: 135.22 KB)
PDFSIE816DF-T1-GE3 Datasheet Cover
SIE816DF-T1-GE3 Datasheet Page 2 SIE816DF-T1-GE3 Datasheet Page 3 SIE816DF-T1-GE3 Datasheet Page 4 SIE816DF-T1-GE3 Datasheet Page 5 SIE816DF-T1-GE3 Datasheet Page 6 SIE816DF-T1-GE3 Datasheet Page 7

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SIE816DF-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7.4mOhm @ 19.8A, 10V
Vgs(th) (Max) @ Id4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs77nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3100pF @ 30V
FET Feature-
Power Dissipation (Max)5.2W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package10-PolarPAK® (L)
Package / Case10-PolarPAK® (L)

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