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SIJ478DP-T1-GE3

SIJ478DP-T1-GE3

For Reference Only

Part Number SIJ478DP-T1-GE3
PNEDA Part # SIJ478DP-T1-GE3
Description MOSFET N-CH 80V 60A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,258
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIJ478DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIJ478DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIJ478DP-T1-GE3, SIJ478DP-T1-GE3 Datasheet (Total Pages: 10, Size: 169.59 KB)
PDFSIJ478DP-T1-GE3 Datasheet Cover
SIJ478DP-T1-GE3 Datasheet Page 2 SIJ478DP-T1-GE3 Datasheet Page 3 SIJ478DP-T1-GE3 Datasheet Page 4 SIJ478DP-T1-GE3 Datasheet Page 5 SIJ478DP-T1-GE3 Datasheet Page 6 SIJ478DP-T1-GE3 Datasheet Page 7 SIJ478DP-T1-GE3 Datasheet Page 8 SIJ478DP-T1-GE3 Datasheet Page 9 SIJ478DP-T1-GE3 Datasheet Page 10

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SIJ478DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs54nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1855pF @ 40V
FET Feature-
Power Dissipation (Max)5W (Ta), 62.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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