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SIDR626DP-T1-GE3

SIDR626DP-T1-GE3

For Reference Only

Part Number SIDR626DP-T1-GE3
PNEDA Part # SIDR626DP-T1-GE3
Description MOSFET N-CHAN 60V
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 28,842
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIDR626DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIDR626DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIDR626DP-T1-GE3, SIDR626DP-T1-GE3 Datasheet (Total Pages: 9, Size: 228.99 KB)
PDFSIDR626DP-T1-GE3 Datasheet Cover
SIDR626DP-T1-GE3 Datasheet Page 2 SIDR626DP-T1-GE3 Datasheet Page 3 SIDR626DP-T1-GE3 Datasheet Page 4 SIDR626DP-T1-GE3 Datasheet Page 5 SIDR626DP-T1-GE3 Datasheet Page 6 SIDR626DP-T1-GE3 Datasheet Page 7 SIDR626DP-T1-GE3 Datasheet Page 8 SIDR626DP-T1-GE3 Datasheet Page 9

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SIDR626DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C42.8A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs1.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs102nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5130pF @ 30V
FET Feature-
Power Dissipation (Max)6.25W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8DC
Package / CasePowerPAK® SO-8

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