SIB417EDK-T1-GE3 Datasheet
SIB417EDK-T1-GE3 Datasheet
Total Pages: 9
Size: 213.45 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIB417EDK-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 58mOhm @ 5.8A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V Vgs (Max) ±5V Input Capacitance (Ciss) (Max) @ Vds 565pF @ 4V FET Feature - Power Dissipation (Max) 2.4W (Ta), 13W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-75-6L Single Package / Case PowerPAK® SC-75-6L |
