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SIA911EDJ-T1-GE3

SIA911EDJ-T1-GE3

For Reference Only

Part Number SIA911EDJ-T1-GE3
PNEDA Part # SIA911EDJ-T1-GE3
Description MOSFET 2P-CH 20V 4.5A SC70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,618
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIA911EDJ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIA911EDJ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIA911EDJ-T1-GE3, SIA911EDJ-T1-GE3 Datasheet (Total Pages: 7, Size: 117.32 KB)
PDFSIA911EDJ-T1-GE3 Datasheet Cover
SIA911EDJ-T1-GE3 Datasheet Page 2 SIA911EDJ-T1-GE3 Datasheet Page 3 SIA911EDJ-T1-GE3 Datasheet Page 4 SIA911EDJ-T1-GE3 Datasheet Page 5 SIA911EDJ-T1-GE3 Datasheet Page 6 SIA911EDJ-T1-GE3 Datasheet Page 7

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SIA911EDJ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4.5A
Rds On (Max) @ Id, Vgs101mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max7.8W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SC-70-6 Dual
Supplier Device PackagePowerPAK® SC-70-6 Dual

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