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NTMFD5C466NT1G

NTMFD5C466NT1G

For Reference Only

Part Number NTMFD5C466NT1G
PNEDA Part # NTMFD5C466NT1G
Description 40V 8.1 MOHM T8 S08FL DUA
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,740
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 20 - Apr 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTMFD5C466NT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTMFD5C466NT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays

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NTMFD5C466NT1G Specifications

ManufacturerON Semiconductor
Series-
FET Type-
FET Feature-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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NVMFD5C466NWFT1G

ON Semiconductor

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FET Type

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

14A (Ta), 49A (Tc)

Rds On (Max) @ Id, Vgs

8.1mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

650pF @ 25V

Power - Max

3W (Ta), 38W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Texas Instruments

Manufacturer

Series

NexFET™

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

3.9A

Rds On (Max) @ Id, Vgs

162mOhm @ 1A, 1.8V

Vgs(th) (Max) @ Id

1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

3.7nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

595pF @ 10V

Power - Max

700mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

9-UFBGA, DSBGA

Supplier Device Package

9-DSBGA

SI6983DQ-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.6A

Rds On (Max) @ Id, Vgs

24mOhm @ 5.4A, 4.5V

Vgs(th) (Max) @ Id

1V @ 400µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

830mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOP (0.173", 4.40mm Width)

Supplier Device Package

8-TSSOP

FD6M043N08

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Power-SPM™

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

65A

Rds On (Max) @ Id, Vgs

4.3mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

148nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

6180pF @ 25V

Power - Max

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

EPM15

Supplier Device Package

EPM15

SI5975DC-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

3.1A

Rds On (Max) @ Id, Vgs

86mOhm @ 3.1A, 4.5V

Vgs(th) (Max) @ Id

450mV @ 1mA (Min)

Gate Charge (Qg) (Max) @ Vgs

9nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Supplier Device Package

1206-8 ChipFET™

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