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SIA910EDJ-T1-GE3

SIA910EDJ-T1-GE3

For Reference Only

Part Number SIA910EDJ-T1-GE3
PNEDA Part # SIA910EDJ-T1-GE3
Description MOSFET 2N-CH 12V 4.5A SC-70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,106
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIA910EDJ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIA910EDJ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIA910EDJ-T1-GE3, SIA910EDJ-T1-GE3 Datasheet (Total Pages: 9, Size: 275.6 KB)
PDFSIA910EDJ-T1-GE3 Datasheet Cover
SIA910EDJ-T1-GE3 Datasheet Page 2 SIA910EDJ-T1-GE3 Datasheet Page 3 SIA910EDJ-T1-GE3 Datasheet Page 4 SIA910EDJ-T1-GE3 Datasheet Page 5 SIA910EDJ-T1-GE3 Datasheet Page 6 SIA910EDJ-T1-GE3 Datasheet Page 7 SIA910EDJ-T1-GE3 Datasheet Page 8 SIA910EDJ-T1-GE3 Datasheet Page 9

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SIA910EDJ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C4.5A
Rds On (Max) @ Id, Vgs28mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds455pF @ 6V
Power - Max7.8W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SC-70-6 Dual
Supplier Device PackagePowerPAK® SC-70-6 Dual

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