SIA910EDJ-T1-GE3 Datasheet
SIA910EDJ-T1-GE3 Datasheet
Total Pages: 9
Size: 275.6 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIA910EDJ-T1-GE3
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 4.5A Rds On (Max) @ Id, Vgs 28mOhm @ 5.2A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 16nC @ 8V Input Capacitance (Ciss) (Max) @ Vds 455pF @ 6V Power - Max 7.8W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SC-70-6 Dual Supplier Device Package PowerPAK® SC-70-6 Dual |
