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SIA906EDJ-T1-GE3

SIA906EDJ-T1-GE3

For Reference Only

Part Number SIA906EDJ-T1-GE3
PNEDA Part # SIA906EDJ-T1-GE3
Description MOSFET 2N-CH 20V 4.5A SC70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 218,982
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIA906EDJ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIA906EDJ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIA906EDJ-T1-GE3, SIA906EDJ-T1-GE3 Datasheet (Total Pages: 9, Size: 295.12 KB)
PDFSIA906EDJ-T1-GE3 Datasheet Cover
SIA906EDJ-T1-GE3 Datasheet Page 2 SIA906EDJ-T1-GE3 Datasheet Page 3 SIA906EDJ-T1-GE3 Datasheet Page 4 SIA906EDJ-T1-GE3 Datasheet Page 5 SIA906EDJ-T1-GE3 Datasheet Page 6 SIA906EDJ-T1-GE3 Datasheet Page 7 SIA906EDJ-T1-GE3 Datasheet Page 8 SIA906EDJ-T1-GE3 Datasheet Page 9

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SIA906EDJ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4.5A
Rds On (Max) @ Id, Vgs46mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds350pF @ 10V
Power - Max7.8W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SC-70-6 Dual
Supplier Device PackagePowerPAK® SC-70-6 Dual

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