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SI7946DP-T1-GE3

SI7946DP-T1-GE3

For Reference Only

Part Number SI7946DP-T1-GE3
PNEDA Part # SI7946DP-T1-GE3
Description MOSFET 2N-CH 150V 2.1A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,748
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7946DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7946DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI7946DP-T1-GE3, SI7946DP-T1-GE3 Datasheet (Total Pages: 6, Size: 94.79 KB)
PDFSI7946DP-T1-GE3 Datasheet Cover
SI7946DP-T1-GE3 Datasheet Page 2 SI7946DP-T1-GE3 Datasheet Page 3 SI7946DP-T1-GE3 Datasheet Page 4 SI7946DP-T1-GE3 Datasheet Page 5 SI7946DP-T1-GE3 Datasheet Page 6

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SI7946DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C2.1A
Rds On (Max) @ Id, Vgs150mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.4W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

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