IPG20N06S4L11AATMA1
For Reference Only
| Part Number | IPG20N06S4L11AATMA1 |
| PNEDA Part # | IPG20N06S4L11AATMA1 |
| Description | MOSFET 2N-CH 8TDSON |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 8,406 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 5 - Apr 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPG20N06S4L11AATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPG20N06S4L11AATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
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IPG20N06S4L11AATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Rds On (Max) @ Id, Vgs | 11.2mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 28µA |
| Gate Charge (Qg) (Max) @ Vgs | 53nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4020pF @ 25V |
| Power - Max | 65W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount, Wettable Flank |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TDSON-8-10 |
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Manufacturer ON Semiconductor Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 35V Current - Continuous Drain (Id) @ 25°C 10A Rds On (Max) @ Id, Vgs 17mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 960pF @ 20V Power - Max 2.5W Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.173", 4.40mm Width) Supplier Device Package 8-SOP |
