Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI7718DN-T1-GE3

SI7718DN-T1-GE3

For Reference Only

Part Number SI7718DN-T1-GE3
PNEDA Part # SI7718DN-T1-GE3
Description MOSFET N-CH 30V 35A 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,966
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 30 - Dec 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7718DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7718DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI7718DN-T1-GE3, SI7718DN-T1-GE3 Datasheet (Total Pages: 7, Size: 104.85 KB)
PDFSI7718DN-T1-GE3 Datasheet Cover
SI7718DN-T1-GE3 Datasheet Page 2 SI7718DN-T1-GE3 Datasheet Page 3 SI7718DN-T1-GE3 Datasheet Page 4 SI7718DN-T1-GE3 Datasheet Page 5 SI7718DN-T1-GE3 Datasheet Page 6 SI7718DN-T1-GE3 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI7718DN-T1-GE3 Datasheet
  • where to find SI7718DN-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SI7718DN-T1-GE3
  • SI7718DN-T1-GE3 PDF Datasheet
  • SI7718DN-T1-GE3 Stock

  • SI7718DN-T1-GE3 Pinout
  • Datasheet SI7718DN-T1-GE3
  • SI7718DN-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SI7718DN-T1-GE3 Price
  • SI7718DN-T1-GE3 Distributor

SI7718DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1600pF @ 15V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

The Products You May Be Interested In

SQS415ENW-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

16.1mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

82nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4825pF @ 25V

FET Feature

-

Power Dissipation (Max)

62.5W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8W

Package / Case

PowerPAK® 1212-8W

FKI10126

Sanken

Manufacturer

Sanken

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

41A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

11.6mOhm @ 33A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1.5mA

Gate Charge (Qg) (Max) @ Vgs

88.8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6420pF @ 25V

FET Feature

-

Power Dissipation (Max)

42W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

NDB7050L

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

15mOhm @ 37.5A, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

115nC @ 5V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

4000pF @ 25V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FQI9N08TU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

9.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

210mOhm @ 4.65A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.7nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

250pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.75W (Ta), 40W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK (TO-262)

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

NTD95N02R-001

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

24V

Current - Continuous Drain (Id) @ 25°C

12A (Ta), 32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

21nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2400pF @ 20V

FET Feature

-

Power Dissipation (Max)

1.25W (Ta), 86W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Recently Sold

ISL3152EIPZ

ISL3152EIPZ

Renesas Electronics America Inc.

IC TRANSCEIVER HALF 1/1 8DIP

AD8505ARJZ-R7

AD8505ARJZ-R7

Analog Devices

IC OPAMP GP 1 CIRCUIT SOT23-5

NRVBS3100T3G

NRVBS3100T3G

ON Semiconductor

DIODE SCHOTTKY 100V 3A SMC

AS4C256M16D3B-12BIN

AS4C256M16D3B-12BIN

Alliance Memory, Inc.

IC DRAM 4G PARALLEL 96FBGA

SMBJ15A-13-F

SMBJ15A-13-F

Diodes Incorporated

TVS DIODE 15V 24.4V SMB

LM2596DSADJR4G

LM2596DSADJR4G

ON Semiconductor

IC REG MULT CONFG ADJ 3A D2PAK-5

0437007.WR

0437007.WR

Littelfuse

FUSE BRD MNT 7A 32VAC 35VDC 1206

ADM3251EARWZ

ADM3251EARWZ

Analog Devices

DGTL ISO 2.5KV 2CH RS232 20SOIC

ARF445

ARF445

Microsemi

PWR MOSFET RF N-CH 900V TO-247AD

T9AS1D12-15

T9AS1D12-15

TE Connectivity Potter & Brumfield Relays

RELAY GEN PURPOSE SPST 30A 15V

ADM1021ARQ

ADM1021ARQ

ON Semiconductor

IC SENSOR TEMP DUAL3/5.5V 16QSOP

UVR1E101MED1TA

UVR1E101MED1TA

Nichicon

CAP ALUM 100UF 20% 25V RADIAL