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SI7100DN-T1-GE3

SI7100DN-T1-GE3

For Reference Only

Part Number SI7100DN-T1-GE3
PNEDA Part # SI7100DN-T1-GE3
Description MOSFET N-CH 8V 35A PPAK 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,462
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7100DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7100DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI7100DN-T1-GE3, SI7100DN-T1-GE3 Datasheet (Total Pages: 14, Size: 544.61 KB)
PDFSI7100DN-T1-GE3 Datasheet Cover
SI7100DN-T1-GE3 Datasheet Page 2 SI7100DN-T1-GE3 Datasheet Page 3 SI7100DN-T1-GE3 Datasheet Page 4 SI7100DN-T1-GE3 Datasheet Page 5 SI7100DN-T1-GE3 Datasheet Page 6 SI7100DN-T1-GE3 Datasheet Page 7 SI7100DN-T1-GE3 Datasheet Page 8 SI7100DN-T1-GE3 Datasheet Page 9 SI7100DN-T1-GE3 Datasheet Page 10 SI7100DN-T1-GE3 Datasheet Page 11

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SI7100DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs3.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs105nC @ 8V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds3810pF @ 4V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 52W (Tc)
Operating Temperature-50°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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