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IXFH12N120

IXFH12N120

For Reference Only

Part Number IXFH12N120
PNEDA Part # IXFH12N120
Description MOSFET N-CH 1200V 12A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,454
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH12N120 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFH12N120
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFH12N120, IXFH12N120 Datasheet (Total Pages: 4, Size: 90.19 KB)
PDFIXFH12N120 Datasheet Cover
IXFH12N120 Datasheet Page 2 IXFH12N120 Datasheet Page 3 IXFH12N120 Datasheet Page 4

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IXFH12N120 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs95nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3400pF @ 25V
FET Feature-
Power Dissipation (Max)500W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD (IXFH)
Package / CaseTO-247-3

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