EFC4618R-P-TR
For Reference Only
Part Number | EFC4618R-P-TR |
PNEDA Part # | EFC4618R-P-TR |
Description | MOSFET 2N-CH EFCP1818 |
Manufacturer | ON Semiconductor |
Unit Price | Request a Quote |
In Stock | 3,490 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
EFC4618R-P-TR Resources
Brand | ON Semiconductor |
ECAD Module | |
Mfr. Part Number | EFC4618R-P-TR |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- EFC4618R-P-TR Datasheet
- where to find EFC4618R-P-TR
- ON Semiconductor
- ON Semiconductor EFC4618R-P-TR
- EFC4618R-P-TR PDF Datasheet
- EFC4618R-P-TR Stock
- EFC4618R-P-TR Pinout
- Datasheet EFC4618R-P-TR
- EFC4618R-P-TR Supplier
- ON Semiconductor Distributor
- EFC4618R-P-TR Price
- EFC4618R-P-TR Distributor
EFC4618R-P-TR Specifications
Manufacturer | ON Semiconductor |
Series | - |
FET Type | 2 N-Channel (Dual) Common Drain |
FET Feature | Logic Level Gate, 2.5V Drive |
Drain to Source Voltage (Vdss) | - |
Current - Continuous Drain (Id) @ 25°C | - |
Rds On (Max) @ Id, Vgs | - |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 25.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.6W |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 4-XBGA, 4-FCBGA |
Supplier Device Package | EFCP1313-4CC-037 |
The Products You May Be Interested In
Infineon Technologies Manufacturer Infineon Technologies Series Automotive, AEC-Q101, OptiMOS™ FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 20A Rds On (Max) @ Id, Vgs 11.6mOhm @ 17A, 10V Vgs(th) (Max) @ Id 2.2V @ 15µA Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1990pF @ 25V Power - Max 41W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerVDFN Supplier Device Package PG-TDSON-8-4 |
ON Semiconductor Manufacturer ON Semiconductor Series * FET Type - FET Feature - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 160mA Rds On (Max) @ Id, Vgs 8Ohm @ 100mA, 5V Vgs(th) (Max) @ Id 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 27pF @ 25V Power - Max 400mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package SOT-563 |
Vishay Siliconix Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type 2 N-Channel (Dual) Asymmetrical FET Feature Standard Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 20A (Tc), 60A (Tc) Rds On (Max) @ Id, Vgs 11mOhm @ 4A, 10V, 4.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V, 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V, 2800pF @ 25V Power - Max 27W (Tc), 48W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SO-8 Dual Supplier Device Package PowerPAK® SO-8 Dual Asymmetric |
Infineon Technologies Manufacturer Infineon Technologies Series OptiMOS™ FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1.5A Rds On (Max) @ Id, Vgs 140mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 3.7µA Gate Charge (Qg) (Max) @ Vgs 0.73nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 143pF @ 10V Power - Max 500mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-23-6 Thin, TSOT-23-6 Supplier Device Package PG-TSOP-6-6 |