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SISF02DN-T1-GE3

SISF02DN-T1-GE3

For Reference Only

Part Number SISF02DN-T1-GE3
PNEDA Part # SISF02DN-T1-GE3
Description MOSFET DUAL N-CH 25V 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,166
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SISF02DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSISF02DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SISF02DN-T1-GE3, SISF02DN-T1-GE3 Datasheet (Total Pages: 9, Size: 230.08 KB)
PDFSISF02DN-T1-GE3 Datasheet Cover
SISF02DN-T1-GE3 Datasheet Page 2 SISF02DN-T1-GE3 Datasheet Page 3 SISF02DN-T1-GE3 Datasheet Page 4 SISF02DN-T1-GE3 Datasheet Page 5 SISF02DN-T1-GE3 Datasheet Page 6 SISF02DN-T1-GE3 Datasheet Page 7 SISF02DN-T1-GE3 Datasheet Page 8 SISF02DN-T1-GE3 Datasheet Page 9

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SISF02DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET Type2 N-Channel (Dual) Common Drain
FET FeatureStandard
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C30.5A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs3.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2650pF @ 10V
Power - Max5.2W (Ta), 69.4W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® 1212-8SCD
Supplier Device PackagePowerPAK® 1212-8SCD

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