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SI3493BDV-T1-GE3

SI3493BDV-T1-GE3

For Reference Only

Part Number SI3493BDV-T1-GE3
PNEDA Part # SI3493BDV-T1-GE3
Description MOSFET P-CH 20V 8A 6-TSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,740
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI3493BDV-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI3493BDV-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI3493BDV-T1-GE3, SI3493BDV-T1-GE3 Datasheet (Total Pages: 11, Size: 221.46 KB)
PDFSI3493BDV-T1-E3 Datasheet Cover
SI3493BDV-T1-E3 Datasheet Page 2 SI3493BDV-T1-E3 Datasheet Page 3 SI3493BDV-T1-E3 Datasheet Page 4 SI3493BDV-T1-E3 Datasheet Page 5 SI3493BDV-T1-E3 Datasheet Page 6 SI3493BDV-T1-E3 Datasheet Page 7 SI3493BDV-T1-E3 Datasheet Page 8 SI3493BDV-T1-E3 Datasheet Page 9 SI3493BDV-T1-E3 Datasheet Page 10 SI3493BDV-T1-E3 Datasheet Page 11

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SI3493BDV-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs27.5mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs43.5nC @ 5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds1805pF @ 10V
FET Feature-
Power Dissipation (Max)2.08W (Ta), 2.97W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-TSOP
Package / CaseSOT-23-6 Thin, TSOT-23-6

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