Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI5935CDC-T1-E3

SI5935CDC-T1-E3

For Reference Only

Part Number SI5935CDC-T1-E3
PNEDA Part # SI5935CDC-T1-E3
Description MOSFET 2P-CH 20V 4A 1206-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,094
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI5935CDC-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI5935CDC-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI5935CDC-T1-E3, SI5935CDC-T1-E3 Datasheet (Total Pages: 11, Size: 244.04 KB)
PDFSI5935CDC-T1-E3 Datasheet Cover
SI5935CDC-T1-E3 Datasheet Page 2 SI5935CDC-T1-E3 Datasheet Page 3 SI5935CDC-T1-E3 Datasheet Page 4 SI5935CDC-T1-E3 Datasheet Page 5 SI5935CDC-T1-E3 Datasheet Page 6 SI5935CDC-T1-E3 Datasheet Page 7 SI5935CDC-T1-E3 Datasheet Page 8 SI5935CDC-T1-E3 Datasheet Page 9 SI5935CDC-T1-E3 Datasheet Page 10 SI5935CDC-T1-E3 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI5935CDC-T1-E3 Datasheet
  • where to find SI5935CDC-T1-E3
  • Vishay Siliconix

  • Vishay Siliconix SI5935CDC-T1-E3
  • SI5935CDC-T1-E3 PDF Datasheet
  • SI5935CDC-T1-E3 Stock

  • SI5935CDC-T1-E3 Pinout
  • Datasheet SI5935CDC-T1-E3
  • SI5935CDC-T1-E3 Supplier

  • Vishay Siliconix Distributor
  • SI5935CDC-T1-E3 Price
  • SI5935CDC-T1-E3 Distributor

SI5935CDC-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 P-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4A
Rds On (Max) @ Id, Vgs100mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds455pF @ 10V
Power - Max3.1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SMD, Flat Lead
Supplier Device Package1206-8 ChipFET™

The Products You May Be Interested In

DMGD7N45SSD-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

450V

Current - Continuous Drain (Id) @ 25°C

500mA (Ta)

Rds On (Max) @ Id, Vgs

4Ohm @ 400mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

6.9nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

256pF @ 25V

Power - Max

1.64W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

IRF7754GTRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

5.5A

Rds On (Max) @ Id, Vgs

25mOhm @ 5.4A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

1984pF @ 6V

Power - Max

1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOP (0.173", 4.40mm Width)

Supplier Device Package

8-TSSOP

FDY2000PZ

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

350mA

Rds On (Max) @ Id, Vgs

1.2Ohm @ 350mA, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

100pF @ 10V

Power - Max

446mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SOT-563F

APTC60DDAM70CT1G

Microsemi

Manufacturer

Microsemi Corporation

Series

CoolMOS™

FET Type

2 N-Channel (Dual)

FET Feature

Super Junction

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

39A

Rds On (Max) @ Id, Vgs

70mOhm @ 39A, 10V

Vgs(th) (Max) @ Id

3.9V @ 2.7mA

Gate Charge (Qg) (Max) @ Vgs

259nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

7000pF @ 25V

Power - Max

250W

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

SP1

Supplier Device Package

SP1

IRF7501TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.4A

Rds On (Max) @ Id, Vgs

135mOhm @ 1.7A, 4.5V

Vgs(th) (Max) @ Id

700mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

260pF @ 15V

Power - Max

1.25W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Supplier Device Package

Micro8™

Recently Sold

CRA2512-FZ-R020ELF

CRA2512-FZ-R020ELF

Bourns

RES 0.02 OHM 1% 3W 2512

XC7Z030-1FBG676I

XC7Z030-1FBG676I

Xilinx

IC SOC CORTEX-A9 667MHZ 676FCBGA

CDSU4148

CDSU4148

Comchip Technology

DIODE GEN PURP 75V 150MA 0603

ADR421ARMZ-REEL7

ADR421ARMZ-REEL7

Analog Devices

IC VREF SERIES 2.5V 8MSOP

1N4148WS

1N4148WS

ON Semiconductor

DIODE GEN PURP 75V 150MA SOD323F

MT40A256M16GE-083E IT:B

MT40A256M16GE-083E IT:B

Micron Technology Inc.

IC DRAM 4G PARALLEL 96FBGA

SMBJ36CA-13-F

SMBJ36CA-13-F

Diodes Incorporated

TVS DIODE 36V 58.1V SMB

WSL0805R0500FEA

WSL0805R0500FEA

Vishay Dale

RES 0.05 OHM 1% 1/8W 0805

MAX202EEUE

MAX202EEUE

Maxim Integrated

IC TRANSCEIVER FULL 2/2 16TSSOP

IS42S16160G-7BLI-TR

IS42S16160G-7BLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 256M PARALLEL 54TFBGA

EPC2045ENGRT

EPC2045ENGRT

EPC

GANFET TRANS 100V BUMPED DIE

MP2144GJ-Z

MP2144GJ-Z

Monolithic Power Systems Inc.

IC REG BUCK ADJ 2A TSOT23-8