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SI5935DC-T1-E3

SI5935DC-T1-E3

For Reference Only

Part Number SI5935DC-T1-E3
PNEDA Part # SI5935DC-T1-E3
Description MOSFET 2P-CH 20V 3A 1206-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,536
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI5935DC-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI5935DC-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI5935DC-T1-E3, SI5935DC-T1-E3 Datasheet (Total Pages: 6, Size: 112.26 KB)
PDFSI5935DC-T1-GE3 Datasheet Cover
SI5935DC-T1-GE3 Datasheet Page 2 SI5935DC-T1-GE3 Datasheet Page 3 SI5935DC-T1-GE3 Datasheet Page 4 SI5935DC-T1-GE3 Datasheet Page 5 SI5935DC-T1-GE3 Datasheet Page 6

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SI5935DC-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3A
Rds On (Max) @ Id, Vgs86mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SMD, Flat Lead
Supplier Device Package1206-8 ChipFET™

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