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SI5411EDU-T1-GE3

SI5411EDU-T1-GE3

For Reference Only

Part Number SI5411EDU-T1-GE3
PNEDA Part # SI5411EDU-T1-GE3
Description MOSFET P-CH 12V 25A PPAK CHIPFET
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,282
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI5411EDU-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI5411EDU-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI5411EDU-T1-GE3, SI5411EDU-T1-GE3 Datasheet (Total Pages: 9, Size: 167.33 KB)
PDFSI5411EDU-T1-GE3 Datasheet Cover
SI5411EDU-T1-GE3 Datasheet Page 2 SI5411EDU-T1-GE3 Datasheet Page 3 SI5411EDU-T1-GE3 Datasheet Page 4 SI5411EDU-T1-GE3 Datasheet Page 5 SI5411EDU-T1-GE3 Datasheet Page 6 SI5411EDU-T1-GE3 Datasheet Page 7 SI5411EDU-T1-GE3 Datasheet Page 8 SI5411EDU-T1-GE3 Datasheet Page 9

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SI5411EDU-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs8.2mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs105nC @ 8V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds4100pF @ 6V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 31W (Tc)
Operating Temperature-50°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® ChipFet Single
Package / CasePowerPAK® ChipFET™ Single

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