SI5411EDU-T1-GE3 Datasheet
SI5411EDU-T1-GE3 Datasheet
Total Pages: 9
Size: 167.33 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI5411EDU-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 25A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 8.2mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 105nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 6V FET Feature - Power Dissipation (Max) 3.1W (Ta), 31W (Tc) Operating Temperature -50°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® ChipFet Single Package / Case PowerPAK® ChipFET™ Single |
