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SI5402BDC-T1-GE3

SI5402BDC-T1-GE3

For Reference Only

Part Number SI5402BDC-T1-GE3
PNEDA Part # SI5402BDC-T1-GE3
Description MOSFET N-CH 30V 4.9A 1206-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,614
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI5402BDC-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI5402BDC-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI5402BDC-T1-GE3, SI5402BDC-T1-GE3 Datasheet (Total Pages: 6, Size: 112.89 KB)
PDFSI5402BDC-T1-GE3 Datasheet Cover
SI5402BDC-T1-GE3 Datasheet Page 2 SI5402BDC-T1-GE3 Datasheet Page 3 SI5402BDC-T1-GE3 Datasheet Page 4 SI5402BDC-T1-GE3 Datasheet Page 5 SI5402BDC-T1-GE3 Datasheet Page 6

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SI5402BDC-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs35mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.3W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package1206-8 ChipFET™
Package / Case8-SMD, Flat Lead

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