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SIS862ADN-T1-GE3

SIS862ADN-T1-GE3

For Reference Only

Part Number SIS862ADN-T1-GE3
PNEDA Part # SIS862ADN-T1-GE3
Description MOSFET N-CH 60V PP 52A 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 51,558
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIS862ADN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIS862ADN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIS862ADN-T1-GE3, SIS862ADN-T1-GE3 Datasheet (Total Pages: 9, Size: 246.54 KB)
PDFSIS862ADN-T1-GE3 Datasheet Cover
SIS862ADN-T1-GE3 Datasheet Page 2 SIS862ADN-T1-GE3 Datasheet Page 3 SIS862ADN-T1-GE3 Datasheet Page 4 SIS862ADN-T1-GE3 Datasheet Page 5 SIS862ADN-T1-GE3 Datasheet Page 6 SIS862ADN-T1-GE3 Datasheet Page 7 SIS862ADN-T1-GE3 Datasheet Page 8 SIS862ADN-T1-GE3 Datasheet Page 9

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SIS862ADN-T1-GE3 Specifications

ManufacturerVishay Siliconix
Series*
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

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