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SI4920DY-T1-GE3

SI4920DY-T1-GE3

For Reference Only

Part Number SI4920DY-T1-GE3
PNEDA Part # SI4920DY-T1-GE3
Description MOSFET 2N-CH 30V 8-SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,300
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4920DY-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4920DY-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI4920DY-T1-GE3, SI4920DY-T1-GE3 Datasheet (Total Pages: 5, Size: 80.31 KB)
PDFSI4920DY-T1-E3 Datasheet Cover
SI4920DY-T1-E3 Datasheet Page 2 SI4920DY-T1-E3 Datasheet Page 3 SI4920DY-T1-E3 Datasheet Page 4 SI4920DY-T1-E3 Datasheet Page 5

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SI4920DY-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C-
Rds On (Max) @ Id, Vgs25mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs23nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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