IPG20N06S2L65AATMA1
For Reference Only
| Part Number | IPG20N06S2L65AATMA1 |
| PNEDA Part # | IPG20N06S2L65AATMA1 |
| Description | MOSFET 2N-CH 8TDSON |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 37,596 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 23 - Mar 28 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IPG20N06S2L65AATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IPG20N06S2L65AATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IPG20N06S2L65AATMA1 Datasheet
- where to find IPG20N06S2L65AATMA1
- Infineon Technologies
- Infineon Technologies IPG20N06S2L65AATMA1
- IPG20N06S2L65AATMA1 PDF Datasheet
- IPG20N06S2L65AATMA1 Stock
- IPG20N06S2L65AATMA1 Pinout
- Datasheet IPG20N06S2L65AATMA1
- IPG20N06S2L65AATMA1 Supplier
- Infineon Technologies Distributor
- IPG20N06S2L65AATMA1 Price
- IPG20N06S2L65AATMA1 Distributor
IPG20N06S2L65AATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 14µA |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 410pF @ 25V |
| Power - Max | 43W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount, Wettable Flank |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TDSON-8-10 |
The Products You May Be Interested In
|
Manufacturer Diodes Incorporated Series - FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 5.1A, 3.1A Rds On (Max) @ Id, Vgs 40mOhm @ 8A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1130pF @ 15V Power - Max 1.24W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer EPC Series eGaN® FET Type 2 N-Channel (Half Bridge) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 23A Rds On (Max) @ Id, Vgs 4.4mOhm @ 20A, 5V Vgs(th) (Max) @ Id 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 830pF @ 30V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |
Manufacturer Infineon Technologies Series HEXFET® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4.9A Rds On (Max) @ Id, Vgs 58mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 710pF @ 25V Power - Max 2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 63A (Tc) Rds On (Max) @ Id, Vgs 9mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1950pF @ 25V Power - Max 71W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® 8 x 8 Dual Supplier Device Package PowerPAK® 8 x 8 Dual |
Manufacturer Central Semiconductor Corp Series - FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 160mA, 140mA Rds On (Max) @ Id, Vgs 3Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.46nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 9pF @ 15V Power - Max 125mW Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-963 Supplier Device Package SOT-963 |
