Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI3911DV-T1-E3

SI3911DV-T1-E3

For Reference Only

Part Number SI3911DV-T1-E3
PNEDA Part # SI3911DV-T1-E3
Description MOSFET 2P-CH 20V 1.8A 6TSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,484
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI3911DV-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI3911DV-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI3911DV-T1-E3, SI3911DV-T1-E3 Datasheet (Total Pages: 5, Size: 103.53 KB)
PDFSI3911DV-T1-E3 Datasheet Cover
SI3911DV-T1-E3 Datasheet Page 2 SI3911DV-T1-E3 Datasheet Page 3 SI3911DV-T1-E3 Datasheet Page 4 SI3911DV-T1-E3 Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI3911DV-T1-E3 Datasheet
  • where to find SI3911DV-T1-E3
  • Vishay Siliconix

  • Vishay Siliconix SI3911DV-T1-E3
  • SI3911DV-T1-E3 PDF Datasheet
  • SI3911DV-T1-E3 Stock

  • SI3911DV-T1-E3 Pinout
  • Datasheet SI3911DV-T1-E3
  • SI3911DV-T1-E3 Supplier

  • Vishay Siliconix Distributor
  • SI3911DV-T1-E3 Price
  • SI3911DV-T1-E3 Distributor

SI3911DV-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.8A
Rds On (Max) @ Id, Vgs145mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max830mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP

The Products You May Be Interested In

NTJD4401NT2G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

630mA

Rds On (Max) @ Id, Vgs

375mOhm @ 630mA, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

3nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

46pF @ 20V

Power - Max

270mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-88/SC70-6/SOT-363

CMKDM8005 TR

Central Semiconductor Corp

Manufacturer

Central Semiconductor Corp

Series

-

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

650mA

Rds On (Max) @ Id, Vgs

360mOhm @ 350mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.2nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

100pF @ 16V

Power - Max

350mW

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SOT-363

STL8DN10LF3

STMicroelectronics

Manufacturer

STMicroelectronics

Series

Automotive, AEC-Q101, STripFET™ III

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

20A

Rds On (Max) @ Id, Vgs

35mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

970pF @ 25V

Power - Max

70W

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-PowerVDFN

Supplier Device Package

PowerFlat™ (5x6)

HUFA76407DK8T-F085

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101, UltraFET™

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

-

Rds On (Max) @ Id, Vgs

90mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11.2nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

330pF @ 25V

Power - Max

2.5W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOIC

DMN2300UFL4-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.11A (Ta)

Rds On (Max) @ Id, Vgs

195mOhm @ 300mA, 4.5V

Vgs(th) (Max) @ Id

950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

3.2nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

128.6pF @ 25V

Power - Max

1.39W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-XFDFN Exposed Pad

Supplier Device Package

X2-DFN1310-6 (Type B)

Recently Sold

M24M01-RMN6P

M24M01-RMN6P

STMicroelectronics

IC EEPROM 1M I2C 1MHZ 8SO

ACPL-064L-500E

ACPL-064L-500E

Broadcom

OPTOISO 3.75KV 2CH PUSH PULL 8SO

7443551131

7443551131

Wurth Electronics

FIXED IND 13UH 10A 11.2 MOHM SMD

SRN6045TA-470M

SRN6045TA-470M

Bourns

FIXED IND 47UH 1.6A 200 MOHM SMD

APT2012SGC

APT2012SGC

Kingbright

LED GREEN CLEAR CHIP SMD

MT25QL01GBBB8E12-0SIT

MT25QL01GBBB8E12-0SIT

Micron Technology Inc.

IC FLASH 1G SPI 133MHZ 24TPBGA

HX5149NLT

HX5149NLT

Pulse Electronics Network

PULSE XFMR 1 CT:1CT TX/RX 360UH

WSL2512R0250FEA

WSL2512R0250FEA

Vishay Dale

RES 0.025 OHM 1% 1W 2512

ES1B-E3/61T

ES1B-E3/61T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO214AC

FA-20H 12.0000MD30Z-K3

FA-20H 12.0000MD30Z-K3

EPSON

CRYSTAL 12.00 MHZ 10.0PF SMD

ADF4360-7BCPZRL7

ADF4360-7BCPZRL7

Analog Devices

IC SYNTHESIZER VCO 24LFCSP

FDC6327C

FDC6327C

ON Semiconductor

MOSFET N/P-CH 20V SSOT-6