SI3911DV-T1-E3 Datasheet
SI3911DV-T1-E3 Datasheet
Total Pages: 5
Size: 103.53 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI3911DV-T1-E3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1.8A Rds On (Max) @ Id, Vgs 145mOhm @ 2.2A, 4.5V Vgs(th) (Max) @ Id 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 830mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-23-6 Thin, TSOT-23-6 Supplier Device Package 6-TSOP |
