SI3443DDV-T1-GE3
For Reference Only
| Part Number | SI3443DDV-T1-GE3 |
| PNEDA Part # | SI3443DDV-T1-GE3 |
| Description | MOSFET P-CHAN 20V TSOP6S |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 57,960 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SI3443DDV-T1-GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SI3443DDV-T1-GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SI3443DDV-T1-GE3 Datasheet
- where to find SI3443DDV-T1-GE3
- Vishay Siliconix
- Vishay Siliconix SI3443DDV-T1-GE3
- SI3443DDV-T1-GE3 PDF Datasheet
- SI3443DDV-T1-GE3 Stock
- SI3443DDV-T1-GE3 Pinout
- Datasheet SI3443DDV-T1-GE3
- SI3443DDV-T1-GE3 Supplier
- Vishay Siliconix Distributor
- SI3443DDV-T1-GE3 Price
- SI3443DDV-T1-GE3 Distributor
SI3443DDV-T1-GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta), 5.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 47mOhm @ 4.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 8V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 970pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.7W (Ta), 2.7W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-TSOP |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
The Products You May Be Interested In
|
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 8.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 17mOhm @ 9A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 393pF @ 15V FET Feature - Power Dissipation (Max) 700mW (Ta), 1.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package U-DFN2020-6 (Type F) Package / Case 6-UDFN Exposed Pad |
Manufacturer Transphorm Series - FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 130mOhm @ 13A, 8V Vgs(th) (Max) @ Id 2.6V @ 300µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 8V Vgs (Max) ±18V Input Capacitance (Ciss) (Max) @ Vds 760pF @ 400V FET Feature - Power Dissipation (Max) 96W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 4-PQFN (8x8) Package / Case 4-PowerDFN |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 3.3V Rds On (Max) @ Id, Vgs 17mOhm @ 5A, 3.3V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 16nC @ 3.3V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1503pF @ 6V FET Feature - Power Dissipation (Max) 1.47W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package X3-DSN1010-3 Package / Case 3-XDFN |
Manufacturer STMicroelectronics Series DeepGATE™, STripFET™ VII FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 4.5A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 70mOhm @ 2.25A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 408pF @ 50V FET Feature - Power Dissipation (Max) 2.9W (Ta), 50W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerFlat™ (3.3x3.3) Package / Case 8-PowerVDFN |
Manufacturer Toshiba Semiconductor and Storage Series U-MOSVII FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 15A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id 2.3V @ 200µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 10V FET Feature - Power Dissipation (Max) 1W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP Package / Case 8-SOIC (0.154", 3.90mm Width) |
