Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI3443DDV-T1-GE3

SI3443DDV-T1-GE3

For Reference Only

Part Number SI3443DDV-T1-GE3
PNEDA Part # SI3443DDV-T1-GE3
Description MOSFET P-CHAN 20V TSOP6S
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 57,960
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 19 - Mar 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI3443DDV-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI3443DDV-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI3443DDV-T1-GE3, SI3443DDV-T1-GE3 Datasheet (Total Pages: 11, Size: 244.96 KB)
PDFSI3443DDV-T1-GE3 Datasheet Cover
SI3443DDV-T1-GE3 Datasheet Page 2 SI3443DDV-T1-GE3 Datasheet Page 3 SI3443DDV-T1-GE3 Datasheet Page 4 SI3443DDV-T1-GE3 Datasheet Page 5 SI3443DDV-T1-GE3 Datasheet Page 6 SI3443DDV-T1-GE3 Datasheet Page 7 SI3443DDV-T1-GE3 Datasheet Page 8 SI3443DDV-T1-GE3 Datasheet Page 9 SI3443DDV-T1-GE3 Datasheet Page 10 SI3443DDV-T1-GE3 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI3443DDV-T1-GE3 Datasheet
  • where to find SI3443DDV-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SI3443DDV-T1-GE3
  • SI3443DDV-T1-GE3 PDF Datasheet
  • SI3443DDV-T1-GE3 Stock

  • SI3443DDV-T1-GE3 Pinout
  • Datasheet SI3443DDV-T1-GE3
  • SI3443DDV-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SI3443DDV-T1-GE3 Price
  • SI3443DDV-T1-GE3 Distributor

SI3443DDV-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4A (Ta), 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs47mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 8V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds970pF @ 10V
FET Feature-
Power Dissipation (Max)1.7W (Ta), 2.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-TSOP
Package / CaseSOT-23-6 Thin, TSOT-23-6

The Products You May Be Interested In

TPC8092,LQ(S

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVII

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

15A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id

2.3V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 10V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP

Package / Case

8-SOIC (0.154", 3.90mm Width)

SI4413ADY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

10.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7.5mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

95nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

DMT3020LFDF-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

8.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

17mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

393pF @ 15V

FET Feature

-

Power Dissipation (Max)

700mW (Ta), 1.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

U-DFN2020-6 (Type F)

Package / Case

6-UDFN Exposed Pad

APT17N80BC3G

Microsemi

Manufacturer

Microsemi Corporation

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

290mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

3.9V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

90nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2250pF @ 25V

FET Feature

-

Power Dissipation (Max)

208W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

IPA045N10N3GXKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

64A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 64A, 10V

Vgs(th) (Max) @ Id

3.5V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

117nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8410pF @ 50V

FET Feature

-

Power Dissipation (Max)

39W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-FP

Package / Case

TO-220-3 Full Pack

Recently Sold

CDBHD1100L-G

CDBHD1100L-G

Comchip Technology

BRIDGE RECT 1P 100V 1A MINI-DIP

PI3740-00-LGIZ

PI3740-00-LGIZ

Vicor

DC DC CONVERTER 10-50V

IS25CQ032-JBLE

IS25CQ032-JBLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 32M SPI 104MHZ 8SOIC

STM32L452RET6

STM32L452RET6

STMicroelectronics

IC MCU 32BIT 512KB FLASH 64LQFP

XC7Z020-1CLG400I

XC7Z020-1CLG400I

Xilinx

IC SOC CORTEX-A9 667MHZ 400BGA

AT89S52-24PU

AT89S52-24PU

Microchip Technology

IC MCU 8BIT 8KB FLASH 40DIP

ECLAMP2410P.TCT

ECLAMP2410P.TCT

Semtech

FILTER RC(PI) 45 OHM/12PF SMD

BZT52C22-7-F

BZT52C22-7-F

Diodes Incorporated

DIODE ZENER 22V 500MW SOD123

MAX11207EEE+T

MAX11207EEE+T

Maxim Integrated

IC ADC 20BIT SIGMA-DELTA 16QSOP

TDA06H0SB1

TDA06H0SB1

C&K

SWITCH SLIDE DIP SPST 25MA 24V

SRP5030T-4R7M

SRP5030T-4R7M

Bourns

FIXED IND 4.7UH 4.6A 53 MOHM SMD

IRLML6401TRPBF

IRLML6401TRPBF

Infineon Technologies

MOSFET P-CH 12V 4.3A SOT-23