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SGB20N60ATMA1

SGB20N60ATMA1

For Reference Only

Part Number SGB20N60ATMA1
PNEDA Part # SGB20N60ATMA1
Description IGBT 600V 40A 179W TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,430
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Dec 6 - Dec 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SGB20N60ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSGB20N60ATMA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
SGB20N60ATMA1, SGB20N60ATMA1 Datasheet (Total Pages: 11, Size: 790.21 KB)
PDFSGB20N60ATMA1 Datasheet Cover
SGB20N60ATMA1 Datasheet Page 2 SGB20N60ATMA1 Datasheet Page 3 SGB20N60ATMA1 Datasheet Page 4 SGB20N60ATMA1 Datasheet Page 5 SGB20N60ATMA1 Datasheet Page 6 SGB20N60ATMA1 Datasheet Page 7 SGB20N60ATMA1 Datasheet Page 8 SGB20N60ATMA1 Datasheet Page 9 SGB20N60ATMA1 Datasheet Page 10 SGB20N60ATMA1 Datasheet Page 11

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SGB20N60ATMA1 Specifications

ManufacturerInfineon Technologies
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)40A
Current - Collector Pulsed (Icm)80A
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 20A
Power - Max179W
Switching Energy440µJ (on), 330µJ (off)
Input TypeStandard
Gate Charge100nC
Td (on/off) @ 25°C36ns/225ns
Test Condition400V, 20A, 16Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackagePG-TO263-3

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

90A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

600V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

300V, 15A, 5V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

13A

Current - Collector Pulsed (Icm)

52A

Vce(on) (Max) @ Vge, Ic

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Power - Max

60W

Switching Energy

60µJ (on), 80µJ (off)

Input Type

Standard

Gate Charge

26nC

Td (on/off) @ 25°C

22ns/110ns

Test Condition

480V, 6.5A, 50Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

IXDH30N120

IXYS

Manufacturer

IXYS

Series

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IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

76A

Vce(on) (Max) @ Vge, Ic

2.9V @ 15V, 30A

Power - Max

300W

Switching Energy

4.6mJ (on), 3.4mJ (off)

Input Type

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Gate Charge

120nC

Td (on/off) @ 25°C

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Test Condition

600V, 30A, 47Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Supplier Device Package

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