RQA0005QXDQS#H1 Datasheet
RQA0005QXDQS#H1 Datasheet
Total Pages: 15
Size: 203.07 KB
Renesas Electronics America
This datasheet covers 1 part numbers:
RQA0005QXDQS#H1
|
Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 16V Current - Continuous Drain (Id) @ 25°C 800mA (Ta) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 750mV @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±5V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 9W (Tc) Operating Temperature 150°C Mounting Type Surface Mount Supplier Device Package UPAK Package / Case TO-243AA |
