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IRFR13N20DTRR

IRFR13N20DTRR

For Reference Only

Part Number IRFR13N20DTRR
PNEDA Part # IRFR13N20DTRR
Description MOSFET N-CH 200V 13A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,956
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFR13N20DTRR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFR13N20DTRR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFR13N20DTRR, IRFR13N20DTRR Datasheet (Total Pages: 11, Size: 131.39 KB)
PDFIRFR13N20DCTRLP Datasheet Cover
IRFR13N20DCTRLP Datasheet Page 2 IRFR13N20DCTRLP Datasheet Page 3 IRFR13N20DCTRLP Datasheet Page 4 IRFR13N20DCTRLP Datasheet Page 5 IRFR13N20DCTRLP Datasheet Page 6 IRFR13N20DCTRLP Datasheet Page 7 IRFR13N20DCTRLP Datasheet Page 8 IRFR13N20DCTRLP Datasheet Page 9 IRFR13N20DCTRLP Datasheet Page 10 IRFR13N20DCTRLP Datasheet Page 11

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IRFR13N20DTRR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs235mOhm @ 8A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds830pF @ 25V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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