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IPU103N08N3 G

IPU103N08N3 G

For Reference Only

Part Number IPU103N08N3 G
PNEDA Part # IPU103N08N3-G
Description MOSFET N-CH 80V 50A TO251-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,740
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPU103N08N3 G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPU103N08N3 G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPU103N08N3 G, IPU103N08N3 G Datasheet (Total Pages: 9, Size: 613.82 KB)
PDFIPU103N08N3 G Datasheet Cover
IPU103N08N3 G Datasheet Page 2 IPU103N08N3 G Datasheet Page 3 IPU103N08N3 G Datasheet Page 4 IPU103N08N3 G Datasheet Page 5 IPU103N08N3 G Datasheet Page 6 IPU103N08N3 G Datasheet Page 7 IPU103N08N3 G Datasheet Page 8 IPU103N08N3 G Datasheet Page 9

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IPU103N08N3 G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs10.3mOhm @ 46A, 10V
Vgs(th) (Max) @ Id3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2410pF @ 40V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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