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RQ3E160ADTB

RQ3E160ADTB

For Reference Only

Part Number RQ3E160ADTB
PNEDA Part # RQ3E160ADTB
Description MOSFET N-CH 30V 16A 8HSMT
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 3,312
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RQ3E160ADTB Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRQ3E160ADTB
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RQ3E160ADTB, RQ3E160ADTB Datasheet (Total Pages: 14, Size: 2,464.07 KB)
PDFRQ3E160ADTB Datasheet Cover
RQ3E160ADTB Datasheet Page 2 RQ3E160ADTB Datasheet Page 3 RQ3E160ADTB Datasheet Page 4 RQ3E160ADTB Datasheet Page 5 RQ3E160ADTB Datasheet Page 6 RQ3E160ADTB Datasheet Page 7 RQ3E160ADTB Datasheet Page 8 RQ3E160ADTB Datasheet Page 9 RQ3E160ADTB Datasheet Page 10 RQ3E160ADTB Datasheet Page 11

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RQ3E160ADTB Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C16A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.5mOhm @ 16A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs51nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2550pF @ 15V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-HSMT (3.2x3)
Package / Case8-PowerVDFN

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