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FQU4N50TU-WS

FQU4N50TU-WS

For Reference Only

Part Number FQU4N50TU-WS
PNEDA Part # FQU4N50TU-WS
Description MOSFET N-CH 500V 2.6A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 38,076
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQU4N50TU-WS Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQU4N50TU-WS
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQU4N50TU-WS, FQU4N50TU-WS Datasheet (Total Pages: 10, Size: 1,046.95 KB)
PDFFQU4N50TU-WS Datasheet Cover
FQU4N50TU-WS Datasheet Page 2 FQU4N50TU-WS Datasheet Page 3 FQU4N50TU-WS Datasheet Page 4 FQU4N50TU-WS Datasheet Page 5 FQU4N50TU-WS Datasheet Page 6 FQU4N50TU-WS Datasheet Page 7 FQU4N50TU-WS Datasheet Page 8 FQU4N50TU-WS Datasheet Page 9 FQU4N50TU-WS Datasheet Page 10

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FQU4N50TU-WS Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.7Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds460pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 45W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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