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RJL6018DPK-00#T0

RJL6018DPK-00#T0

For Reference Only

Part Number RJL6018DPK-00#T0
PNEDA Part # RJL6018DPK-00-T0
Description MOSFET N-CH 600V 27A TO3P
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 7,470
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RJL6018DPK-00#T0 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRJL6018DPK-00#T0
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RJL6018DPK-00#T0, RJL6018DPK-00#T0 Datasheet (Total Pages: 7, Size: 72.06 KB)
PDFRJL6018DPK-00#T0 Datasheet Cover
RJL6018DPK-00#T0 Datasheet Page 2 RJL6018DPK-00#T0 Datasheet Page 3 RJL6018DPK-00#T0 Datasheet Page 4 RJL6018DPK-00#T0 Datasheet Page 5 RJL6018DPK-00#T0 Datasheet Page 6 RJL6018DPK-00#T0 Datasheet Page 7

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RJL6018DPK-00#T0 Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C27A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs265mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs98nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3830pF @ 25V
FET Feature-
Power Dissipation (Max)200W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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