Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTTFS5811NLTWG

NTTFS5811NLTWG

For Reference Only

Part Number NTTFS5811NLTWG
PNEDA Part # NTTFS5811NLTWG
Description MOSFET N-CH 40V 53.6A 8DFN
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,938
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTTFS5811NLTWG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTTFS5811NLTWG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTTFS5811NLTWG, NTTFS5811NLTWG Datasheet (Total Pages: 6, Size: 130.5 KB)
PDFNTTFS5811NLTAG Datasheet Cover
NTTFS5811NLTAG Datasheet Page 2 NTTFS5811NLTAG Datasheet Page 3 NTTFS5811NLTAG Datasheet Page 4 NTTFS5811NLTAG Datasheet Page 5 NTTFS5811NLTAG Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NTTFS5811NLTWG Datasheet
  • where to find NTTFS5811NLTWG
  • ON Semiconductor

  • ON Semiconductor NTTFS5811NLTWG
  • NTTFS5811NLTWG PDF Datasheet
  • NTTFS5811NLTWG Stock

  • NTTFS5811NLTWG Pinout
  • Datasheet NTTFS5811NLTWG
  • NTTFS5811NLTWG Supplier

  • ON Semiconductor Distributor
  • NTTFS5811NLTWG Price
  • NTTFS5811NLTWG Distributor

NTTFS5811NLTWG Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C17A (Ta), 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs31nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1570pF @ 25V
FET Feature-
Power Dissipation (Max)2.7W (Ta), 33W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-WDFN (3.3x3.3)
Package / Case8-PowerWDFN

The Products You May Be Interested In

IPI90R1K2C3XKSA2

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

NP109N04PUJ-E2B-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

NTNS3A92PZT5G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

SIHB065N60E-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

E

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

65mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

74nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2700pF @ 100V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IXTA2N80

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6.2Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

440pF @ 25V

FET Feature

-

Power Dissipation (Max)

54W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (IXTA)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

BYW80-200G

BYW80-200G

ON Semiconductor

DIODE GEN PURP 200V 8A TO220-2

0CNL200.V

0CNL200.V

Littelfuse

FUSE STRIP 200A 32VAC/VDC BOLT

EP5358HUI

EP5358HUI

Intel

DC DC CONVERTER 1.8-3.3V 2W

STPS30L60CT

STPS30L60CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 60V TO220AB

S25FL256SAGMFI000

S25FL256SAGMFI000

Cypress Semiconductor

IC FLASH 256M SPI 133MHZ 16SOIC

XC878CM16FFI5VACFXUMA1

XC878CM16FFI5VACFXUMA1

Infineon Technologies

IC MCU 8BIT 64KB FLASH 64LQFP

MUR1100ERLG

MUR1100ERLG

ON Semiconductor

DIODE GEN PURP 1KV 1A AXIAL

PCA9515ADP,118

PCA9515ADP,118

NXP

IC REDRIVER I2C 1CH 8TSSOP

NB-PTCO-157

NB-PTCO-157

TE Connectivity Measurement Specialties

SENSOR RTD 1KOHM 0.001% 2SIP

LFXP2-17E-6FTN256I

LFXP2-17E-6FTN256I

Lattice Semiconductor Corporation

IC FPGA 201 I/O 256FTBGA

KSZ9031RNXIC

KSZ9031RNXIC

Microchip Technology

IC TRANSCEIVER FULL 4/4 48QFN

LTC2855IDE

LTC2855IDE

Linear Technology/Analog Devices

IC TRANSCEIVER FULL 1/1 12DFN