RJK6013DPP-E0#T2
For Reference Only
| Part Number | RJK6013DPP-E0#T2 |
| PNEDA Part # | RJK6013DPP-E0-T2 |
| Description | MOSFET N-CH 600V 11A TO220 |
| Manufacturer | Renesas Electronics America |
| Unit Price | Request a Quote |
| In Stock | 3,960 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
RJK6013DPP-E0#T2 Resources
| Brand | Renesas Electronics America |
| ECAD Module |
|
| Mfr. Part Number | RJK6013DPP-E0#T2 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- RJK6013DPP-E0#T2 Datasheet
- where to find RJK6013DPP-E0#T2
- Renesas Electronics America
- Renesas Electronics America RJK6013DPP-E0#T2
- RJK6013DPP-E0#T2 PDF Datasheet
- RJK6013DPP-E0#T2 Stock
- RJK6013DPP-E0#T2 Pinout
- Datasheet RJK6013DPP-E0#T2
- RJK6013DPP-E0#T2 Supplier
- Renesas Electronics America Distributor
- RJK6013DPP-E0#T2 Price
- RJK6013DPP-E0#T2 Distributor
RJK6013DPP-E0#T2 Specifications
| Manufacturer | Renesas Electronics America |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 37.5nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220FP |
| Package / Case | TO-220-3 Full Pack |
The Products You May Be Interested In
|
Manufacturer Series NexFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 100A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 4.1mOhm @ 19A, 10V Vgs(th) (Max) @ Id 3.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4870pF @ 40V FET Feature - Power Dissipation (Max) 3.1W (Ta), 195W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-VSON-CLIP (5x6) Package / Case 8-PowerTDFN |
Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 27A (Ta), 141A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.1mOhm @ 27A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5300pF @ 20V FET Feature - Power Dissipation (Max) 2.8W (Ta), 75W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package Power33 Package / Case 8-PowerWDFN |
Manufacturer IXYS Integrated Circuits Division Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 0V Rds On (Max) @ Id, Vgs 1Ohm @ 300mA, 0V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds - FET Feature Depletion Mode Power Dissipation (Max) 1.1W (Ta) Operating Temperature -55°C ~ 125°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-89 Package / Case TO-243AA |
Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 13A (Tc) Drive Voltage (Max Rds On, Min Rds On) 13V Rds On (Max) @ Id, Vgs 280mOhm @ 4.2A, 13V Vgs(th) (Max) @ Id 3.5V @ 350µA Gate Charge (Qg) (Max) @ Vgs 32.6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 773pF @ 100V FET Feature Super Junction Power Dissipation (Max) 92W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Infineon Technologies Series SIPMOS® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 47A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 33mOhm @ 33A, 10V Vgs(th) (Max) @ Id 4V @ 2mA Gate Charge (Qg) (Max) @ Vgs 105nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 25V FET Feature - Power Dissipation (Max) 175W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-3-2 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
