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IPB47N10S33ATMA1

IPB47N10S33ATMA1

For Reference Only

Part Number IPB47N10S33ATMA1
PNEDA Part # IPB47N10S33ATMA1
Description MOSFET N-CH 100V 47A TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,508
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB47N10S33ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB47N10S33ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB47N10S33ATMA1, IPB47N10S33ATMA1 Datasheet (Total Pages: 8, Size: 2,933.57 KB)
PDFIPP47N10S33AKSA1 Datasheet Cover
IPP47N10S33AKSA1 Datasheet Page 2 IPP47N10S33AKSA1 Datasheet Page 3 IPP47N10S33AKSA1 Datasheet Page 4 IPP47N10S33AKSA1 Datasheet Page 5 IPP47N10S33AKSA1 Datasheet Page 6 IPP47N10S33AKSA1 Datasheet Page 7 IPP47N10S33AKSA1 Datasheet Page 8

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IPB47N10S33ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs33mOhm @ 33A, 10V
Vgs(th) (Max) @ Id4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs105nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2500pF @ 25V
FET Feature-
Power Dissipation (Max)175W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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