Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

RJK0603DPN-E0#T2

RJK0603DPN-E0#T2

For Reference Only

Part Number RJK0603DPN-E0#T2
PNEDA Part # RJK0603DPN-E0-T2
Description MOSFET N-CH 60V 80A TO220
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 4,500
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 19 - Mar 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RJK0603DPN-E0#T2 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRJK0603DPN-E0#T2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RJK0603DPN-E0#T2, RJK0603DPN-E0#T2 Datasheet (Total Pages: 7, Size: 77.01 KB)
PDFRJK0603DPN-E0#T2 Datasheet Cover
RJK0603DPN-E0#T2 Datasheet Page 2 RJK0603DPN-E0#T2 Datasheet Page 3 RJK0603DPN-E0#T2 Datasheet Page 4 RJK0603DPN-E0#T2 Datasheet Page 5 RJK0603DPN-E0#T2 Datasheet Page 6 RJK0603DPN-E0#T2 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • RJK0603DPN-E0#T2 Datasheet
  • where to find RJK0603DPN-E0#T2
  • Renesas Electronics America

  • Renesas Electronics America RJK0603DPN-E0#T2
  • RJK0603DPN-E0#T2 PDF Datasheet
  • RJK0603DPN-E0#T2 Stock

  • RJK0603DPN-E0#T2 Pinout
  • Datasheet RJK0603DPN-E0#T2
  • RJK0603DPN-E0#T2 Supplier

  • Renesas Electronics America Distributor
  • RJK0603DPN-E0#T2 Price
  • RJK0603DPN-E0#T2 Distributor

RJK0603DPN-E0#T2 Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C80A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.2mOhm @ 40A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs57nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4150pF @ 10V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

IRFB4332PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

33mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

150nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

5860pF @ 25V

FET Feature

-

Power Dissipation (Max)

390W (Tc)

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

CPH6350-P-TL-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

PSMN015-100P,127

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

15mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

90nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4900pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

FDB9409L-F085

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101, PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.9mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

68nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3360pF @ 20V

FET Feature

-

Power Dissipation (Max)

94W (Tj)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

NTLJS2103PTBG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

µCool™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

3.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Rds On (Max) @ Id, Vgs

40mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1157pF @ 6V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-WDFN (2x2)

Package / Case

6-WDFN Exposed Pad

Recently Sold

SRN8040-R50Y

SRN8040-R50Y

Bourns

FIXED IND 500NH 10A 7 MOHM SMD

LT1167ACS8#PBF

LT1167ACS8#PBF

Linear Technology/Analog Devices

IC INST AMP 1 CIRCUIT 8SO

USB2517-JZX-TR

USB2517-JZX-TR

Microchip Technology

IC USB 2.0 7PORT HUB CTLR 64QFN

CMS05(TE12L,Q,M)

CMS05(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 5A MFLAT

R5F2L3AACNFP#V0

R5F2L3AACNFP#V0

Renesas Electronics America

IC MCU 16BIT 96KB FLASH 100QFP

LS4148-GS08

LS4148-GS08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 150MA SOD80

MM74HC14M

MM74HC14M

ON Semiconductor

IC INVERTER SCHMITT 6CH 14SOIC

XC7Z020-1CLG400I

XC7Z020-1CLG400I

Xilinx

IC SOC CORTEX-A9 667MHZ 400BGA

W25Q64DWSSIG

W25Q64DWSSIG

Winbond Electronics

IC FLASH 64M SPI 104MHZ 8SOIC

AT89S52-24PU

AT89S52-24PU

Microchip Technology

IC MCU 8BIT 8KB FLASH 40DIP

ARF444

ARF444

Microsemi

PWR MOSFET RF N-CH 900V TO-247AD

SML-310MTT86

SML-310MTT86

Rohm Semiconductor

LED GREEN CLEAR 0603 SMD