2SK1119(F)
For Reference Only
Part Number | 2SK1119(F) |
PNEDA Part # | 2SK1119-F |
Description | MOSFET N-CH 1000V 4A TO-220AB |
Manufacturer | Toshiba Semiconductor and Storage |
Unit Price | Request a Quote |
In Stock | 6,462 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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2SK1119(F) Resources
Brand | Toshiba Semiconductor and Storage |
ECAD Module | |
Mfr. Part Number | 2SK1119(F) |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
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2SK1119(F) Specifications
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V |
Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3.8Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 100W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
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