RGTH60TK65GC11
For Reference Only
| Part Number | RGTH60TK65GC11 |
| PNEDA Part # | RGTH60TK65GC11 |
| Description | IGBT |
| Manufacturer | Rohm Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 8,664 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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RGTH60TK65GC11 Resources
| Brand | Rohm Semiconductor |
| ECAD Module |
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| Mfr. Part Number | RGTH60TK65GC11 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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RGTH60TK65GC11 Specifications
| Manufacturer | Rohm Semiconductor |
| Series | - |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 28A |
| Current - Collector Pulsed (Icm) | 120A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 30A |
| Power - Max | 61W |
| Switching Energy | - |
| Input Type | Standard |
| Gate Charge | 58nC |
| Td (on/off) @ 25°C | 27ns/105ns |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-3PFM, SC-93-3 |
| Supplier Device Package | TO-3PFM |
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Manufacturer ON Semiconductor Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) - Current - Collector Pulsed (Icm) 170A Vce(on) (Max) @ Vge, Ic 1.88V @ 15V, 30A Power - Max 30W Switching Energy - Input Type Standard Gate Charge 40.3nC Td (on/off) @ 25°C 11.2ns/40.8ns Test Condition 400V, 30A, 5Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220F |
Manufacturer ON Semiconductor Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 35A Current - Collector Pulsed (Icm) 80A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A Power - Max 298W Switching Energy 320µJ (on), 800µJ (off) Input Type Standard Gate Charge 100nC Td (on/off) @ 25°C 23ns/165ns Test Condition 960V, 10A, 10Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 140A Current - Collector Pulsed (Icm) 225A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 75A Power - Max 455W Switching Energy 2.5mJ (on), 2.2mJ (off) Input Type Standard Gate Charge 210nC Td (on/off) @ 25°C 50ns/200ns Test Condition 400V, 75A, 10Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247AD |
Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 150A Current - Collector Pulsed (Icm) 300A Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 75A Power - Max 938W Switching Energy 3.4mJ (on), 2.9mJ (off) Input Type Standard Gate Charge 370nC Td (on/off) @ 25°C 38ns/303ns Test Condition 600V, 75A, 6Ohm, 15V Reverse Recovery Time (trr) 292ns Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-4 Supplier Device Package PG-TO247-4 |
