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IKY75N120CH3XKSA1

IKY75N120CH3XKSA1

For Reference Only

Part Number IKY75N120CH3XKSA1
PNEDA Part # IKY75N120CH3XKSA1
Description IGBT 1200V 150A TO247-4
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,584
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 23 - Mar 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IKY75N120CH3XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIKY75N120CH3XKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IKY75N120CH3XKSA1 Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)150A
Current - Collector Pulsed (Icm)300A
Vce(on) (Max) @ Vge, Ic2.35V @ 15V, 75A
Power - Max938W
Switching Energy3.4mJ (on), 2.9mJ (off)
Input TypeStandard
Gate Charge370nC
Td (on/off) @ 25°C38ns/303ns
Test Condition600V, 75A, 6Ohm, 15V
Reverse Recovery Time (trr)292ns
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-4
Supplier Device PackagePG-TO247-4

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Vce(on) (Max) @ Vge, Ic

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Current - Collector (Ic) (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

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ON Semiconductor

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IGBT Type

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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