RFN10NS6STL
For Reference Only
| Part Number | RFN10NS6STL |
| PNEDA Part # | RFN10NS6STL |
| Description | DIODE GEN PURP 600V 10A LPDS |
| Manufacturer | Rohm Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 4,014 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Feb 18 - Feb 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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RFN10NS6STL Resources
| Brand | Rohm Semiconductor |
| ECAD Module |
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| Mfr. Part Number | RFN10NS6STL |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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RFN10NS6STL Specifications
| Manufacturer | Rohm Semiconductor |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 10A |
| Voltage - Forward (Vf) (Max) @ If | 1.55V @ 10A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50ns |
| Current - Reverse Leakage @ Vr | 10µA @ 600V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | LPDS |
| Operating Temperature - Junction | 150°C (Max) |
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Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1800V Current - Average Rectified (Io) 255A Voltage - Forward (Vf) (Max) @ If - Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 30mA @ 1800V Capacitance @ Vr, F - Mounting Type Stud Mount Package / Case DO-205AA, DO-8, Stud Supplier Device Package - Operating Temperature - Junction -40°C ~ 180°C |
Manufacturer Sanken Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 620mV @ 2A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 2mA @ 60V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case Axial Supplier Device Package - Operating Temperature - Junction -40°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 1.4A Voltage - Forward (Vf) (Max) @ If 1.3V @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 200ns Current - Reverse Leakage @ Vr 5µA @ 100V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case SOD-57, Axial Supplier Device Package SOD-57 Operating Temperature - Junction -55°C ~ 175°C |
