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NSB8MTHE3_A/P

NSB8MTHE3_A/P

For Reference Only

Part Number NSB8MTHE3_A/P
PNEDA Part # NSB8MTHE3_A-P
Description DIODE GEN PURP 1KV 8A TO263AB
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 7,488
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NSB8MTHE3_A/P Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberNSB8MTHE3_A/P
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
NSB8MTHE3_A/P, NSB8MTHE3_A/P Datasheet (Total Pages: 5, Size: 140.64 KB)
PDFNS8KT-7002HE3/45 Datasheet Cover
NS8KT-7002HE3/45 Datasheet Page 2 NS8KT-7002HE3/45 Datasheet Page 3 NS8KT-7002HE3/45 Datasheet Page 4 NS8KT-7002HE3/45 Datasheet Page 5

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NSB8MTHE3_A/P Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesAutomotive, AEC-Q101
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)1000V
Current - Average Rectified (Io)8A
Voltage - Forward (Vf) (Max) @ If1.1V @ 8A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr10µA @ 1000V
Capacitance @ Vr, F55pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AB
Operating Temperature - Junction-55°C ~ 150°C

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