Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

R6520ENJTL

R6520ENJTL

For Reference Only

Part Number R6520ENJTL
PNEDA Part # R6520ENJTL
Description NCH 650V 20A POWER MOSFET. R652
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 2,970
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

R6520ENJTL Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberR6520ENJTL
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • R6520ENJTL Datasheet
  • where to find R6520ENJTL
  • Rohm Semiconductor

  • Rohm Semiconductor R6520ENJTL
  • R6520ENJTL PDF Datasheet
  • R6520ENJTL Stock

  • R6520ENJTL Pinout
  • Datasheet R6520ENJTL
  • R6520ENJTL Supplier

  • Rohm Semiconductor Distributor
  • R6520ENJTL Price
  • R6520ENJTL Distributor

R6520ENJTL Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs205mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id4V @ 630µA
Gate Charge (Qg) (Max) @ Vgs61nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1400pF @ 25V
FET Feature-
Power Dissipation (Max)231W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLPTS
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

SI4886DY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

800mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

20nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.56W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

AOT482L

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

SDMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

11A (Ta), 105A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7V, 10V

Rds On (Max) @ Id, Vgs

7.2mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

81nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

4870pF @ 40V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta), 333W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

IRF7811ATRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

28V

Current - Continuous Drain (Id) @ 25°C

11A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V

Rds On (Max) @ Id, Vgs

10mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

1760pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

IRFSL31N20D

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

31A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

82mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2370pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 200W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

N0439N-S19-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.3mOhm @ 45A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

102nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5850pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta), 147W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

Recently Sold

LT1963AES8#TRPBF

LT1963AES8#TRPBF

Linear Technology/Analog Devices

IC REG LINEAR POS ADJ 1.5A 8SOIC

S3A-13-F

S3A-13-F

Diodes Incorporated

DIODE GEN PURP 50V 3A SMC

IRLML6401TRPBF

IRLML6401TRPBF

Infineon Technologies

MOSFET P-CH 12V 4.3A SOT-23

R5F21335CNFP#30

R5F21335CNFP#30

Renesas Electronics America

IC MCU 16BIT 24KB FLASH 32LQFP

VLMS1300-GS08

VLMS1300-GS08

Vishay Semiconductor Opto Division

LED RED 0603 SMD

STPS2H100U

STPS2H100U

STMicroelectronics

DIODE SCHOTTKY 100V 2A SMB

74F00SC

74F00SC

ON Semiconductor

IC GATE NAND 4CH 2-INP 14SOIC

1SMB36AT3G

1SMB36AT3G

Littelfuse

TVS DIODE 36V 58.1V SMB

S14100038

S14100038

Wurth Electronics

CMC 560UH 20A 2LN TH

KSZ8863MLLI

KSZ8863MLLI

Microchip Technology

IC ETHERNET SWITCH 3PORT 48-LQFP

MIC2026-2YM

MIC2026-2YM

Microchip Technology

IC PW DIST SW DUAL 8SOIC

SMAJ36CA

SMAJ36CA

Littelfuse

TVS DIODE 36V 58.1V DO214AC