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IRFSL31N20D

IRFSL31N20D

For Reference Only

Part Number IRFSL31N20D
PNEDA Part # IRFSL31N20D
Description MOSFET N-CH 200V 31A TO-262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,028
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFSL31N20D Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFSL31N20D
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFSL31N20D, IRFSL31N20D Datasheet (Total Pages: 11, Size: 138.34 KB)
PDFIRFSL31N20DTRR Datasheet Cover
IRFSL31N20DTRR Datasheet Page 2 IRFSL31N20DTRR Datasheet Page 3 IRFSL31N20DTRR Datasheet Page 4 IRFSL31N20DTRR Datasheet Page 5 IRFSL31N20DTRR Datasheet Page 6 IRFSL31N20DTRR Datasheet Page 7 IRFSL31N20DTRR Datasheet Page 8 IRFSL31N20DTRR Datasheet Page 9 IRFSL31N20DTRR Datasheet Page 10 IRFSL31N20DTRR Datasheet Page 11

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IRFSL31N20D Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs82mOhm @ 18A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2370pF @ 25V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 200W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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