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QS8K11TCR

QS8K11TCR

For Reference Only

Part Number QS8K11TCR
PNEDA Part # QS8K11TCR
Description 4V DRIVE NCH+NCH MOSFET
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 5,832
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 21 - Apr 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

QS8K11TCR Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberQS8K11TCR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays

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QS8K11TCR Specifications

ManufacturerRohm Semiconductor
Series-
FET Type2 N-Channel (Dual)
FET Feature-
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C3.5A
Rds On (Max) @ Id, Vgs50mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs3.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds180pF @ 10V
Power - Max1.5W
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SMD, Flat Lead
Supplier Device PackageTSMT8

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FET Type

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Toshiba Semiconductor and Storage

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Series

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FET Type

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FET Feature

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

245pF @ 10V, 218pF @ 10V

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Supplier Device Package

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ON Semiconductor

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Series

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FET Type

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

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Operating Temperature

-55°C ~ 150°C (TJ)

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Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

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DMHC4035LSDQ-13

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40V

Current - Continuous Drain (Id) @ 25°C

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

574pF @ 20V, 587pF @ 20V

Power - Max

1.5W (Ta)

Operating Temperature

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8-SOIC (0.154", 3.90mm Width)

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Microsemi

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Gate Charge (Qg) (Max) @ Vgs

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