Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

QS5U21TR

QS5U21TR

For Reference Only

Part Number QS5U21TR
PNEDA Part # QS5U21TR
Description MOSFET P-CH 20V 1.5A TSMT5
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 7,074
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 19 - Apr 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

QS5U21TR Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberQS5U21TR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
QS5U21TR, QS5U21TR Datasheet (Total Pages: 11, Size: 962.61 KB)
PDFQS5U21TR Datasheet Cover
QS5U21TR Datasheet Page 2 QS5U21TR Datasheet Page 3 QS5U21TR Datasheet Page 4 QS5U21TR Datasheet Page 5 QS5U21TR Datasheet Page 6 QS5U21TR Datasheet Page 7 QS5U21TR Datasheet Page 8 QS5U21TR Datasheet Page 9 QS5U21TR Datasheet Page 10 QS5U21TR Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • QS5U21TR Datasheet
  • where to find QS5U21TR
  • Rohm Semiconductor

  • Rohm Semiconductor QS5U21TR
  • QS5U21TR PDF Datasheet
  • QS5U21TR Stock

  • QS5U21TR Pinout
  • Datasheet QS5U21TR
  • QS5U21TR Supplier

  • Rohm Semiconductor Distributor
  • QS5U21TR Price
  • QS5U21TR Distributor

QS5U21TR Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs200mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs4.2nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds325pF @ 10V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1.25W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTSMT5
Package / CaseSOT-23-5 Thin, TSOT-23-5

The Products You May Be Interested In

Manufacturer

IXYS

Series

HiPerFET™, Polar3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

70mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

190nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

13100pF @ 25V

FET Feature

-

Power Dissipation (Max)

1300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS247™-3

Package / Case

TO-247-3

DKI04046

Sanken

Manufacturer

Sanken

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

48A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.2mOhm @ 35.4A, 10V

Vgs(th) (Max) @ Id

2.5V @ 650µA

Gate Charge (Qg) (Max) @ Vgs

35.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2410pF @ 25V

FET Feature

-

Power Dissipation (Max)

47W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRF5210L

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

60mOhm @ 24A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

180nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2700pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 200W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

BSO094N03S

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9.1mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

2V @ 30µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2300pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.56W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-DSO-8

Package / Case

8-SOIC (0.154", 3.90mm Width)

RJK0603DPN-E0#T2

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

80A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5.2mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

57nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4150pF @ 10V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

DLW5BTN501SQ2L

DLW5BTN501SQ2L

Murata

CMC 4A 2LN 500 OHM SMD

CDBK0540

CDBK0540

Comchip Technology

DIODE SCHOTTKY 40V 500MA SOD123F

ZXTR2005K-13

ZXTR2005K-13

Diodes Incorporated

IC REG LINEAR 5V 50MA TO252

PIC18F2455-I/SO

PIC18F2455-I/SO

Microchip Technology

IC MCU 8BIT 24KB FLASH 28SOIC

MIC4420YN

MIC4420YN

Microchip Technology

IC DRIVER MOSFET 6A LO SIDE 8DIP

4TPE100MZB

4TPE100MZB

Panasonic Electronic Components

CAP TANT POLY 100UF 4V 1411

74F00SC

74F00SC

ON Semiconductor

IC GATE NAND 4CH 2-INP 14SOIC

MCP41010T-I/SN

MCP41010T-I/SN

Microchip Technology

IC DGTL POT 10KOHM 256TAP 8SOIC

IS61WV25616BLL-10TLI

IS61WV25616BLL-10TLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 4M PARALLEL 44TSOP II

MCP1725-3302E/MC

MCP1725-3302E/MC

Microchip Technology

IC REG LINEAR 3.3V 500MA 8DFN

1N4148-P-TR

1N4148-P-TR

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 2A DO35

CS51414EDR8G

CS51414EDR8G

ON Semiconductor

IC REG BUCK ADJ 1.5A 8SOIC